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This gives rise to the saturation region of the Ic - VCEcharacteristic shown in Fig. 12. The slope of the Ic - VCEcharacteristic in this region is largely determined by the resistance in series with the collector lead due to the finite resistivity of the n-type collector material. A useful model for the transistor in this region is shown in Fig. 13 and consists of a fixed voltage source to represent VB,qon),and a fixed voltage source to represent the collector-emitter voltage VCqsat). A more accurate but more complex model includes a resistor in series with the collector.

EXAMPLE If Ico is 10-l0 A at 24"C, estimate its value at 120•‹C. 2 the mechanism of avalanche breakdown in a pn junction was described. Similar effects occur at the base-emitter and base-collector junctions of a transistor and these effects limit the maximum voltages that can be applied to the device. First consider a transistor in the common-base configuration shown in Fig. 1 . 1 4 ~and supplied with a constant emitter current. Typical Ic - VCBcharacteristics for an npn transistor in such a connection are shown in Fig.

Thus the substrate is an ac ground, and all parasitic capacitance to the substrate is connected to ground in an equivalent circuit. The final elements to be added to the small-signal model of the transistor are resistive parasitics. These are produced by the finite resistance of the silicon between the top contacts on the transistor and the active base region beneath the emitter. As shown in Fig. 19, there are significant resistances rb and r, in series with the base and collector contacts, respectively.

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